Devices including metal layer

ABSTRACT

Devices having an air bearing surface (ABS) and including a write pole; a near field transducer (NFT) that includes a peg and a disc, wherein the peg includes a rear peg portion and a peg tip, the rear peg portion and the peg tip are different materials and the peg tip includes: one or more metals; one or more nanoparticles comprising oxides, nitrides, carbides or combinations thereof; one or more conducting oxides, conducting nitrides, conducting bromides, conducting carbides, or combinations thereof; one or more semiconductors; or combinations thereof.

PRIORITY

This application is a continuation of U.S. application Ser. No.15/073,445 entitled DEVICES INCLUDING METAL LAYER, filed on Mar. 17,2016 and which claims priority to U.S. Provisional Application No.62/136,546 entitled NEAR FIELD TRANSDUCERS (NFTS) AND ADJACENTSTRUCTURES FOR HEAT ASSISTAED MAGNETIC RECORDING filed on Mar. 22, 2015the disclosures of which are incorporated herein by reference thereto.

SUMMARY

Disclosed are devices having an air bearing surface (ABS) and includinga write pole; a near field transducer (NFT) that includes a peg and adisc, wherein the peg includes a rear peg portion and a peg tip, therear peg portion and the peg tip are different materials and the peg tipincludes: one or more metals selected from: gold (Au), silver (Ag),aluminum (Al), copper (Cu), rhodium (Rh), ruthenium (Ru), iridium (Ir),niobium (Nb), tantalum (Ta), titanium (Ti), chromium (Cr), zirconium(Zr), palladium (Pd), vanadium (V), molybdenum (Mo), cobalt (Co),magnesium (Mg), iron (Fe), platinum (Pt), nickel (Ni), manganese (Mn),indium (In), scandium (Sc), yttrium (Y), gallium (Ga), hafnium (Hf),zinc (Zn), gadolinium (Gd), holmium (Ho), terbium (Tb), samarium (Sm),dysprosium (Dy), neodymium (Nd), or combinations thereof; one or moremetals selected from gold (Au), silver (Ag), aluminum (Al), copper (Cu),rhodium (Rh), ruthenium (Ru), iridium (Ir), niobium (Nb), tantalum (Ta),titanium (Ti), chromium (Cr), zirconium (Zr), palladium (Pd), vanadium(V), molybdenum (Mo), cobalt (Co), magnesium (Mg), iron (Fe), platinum(Pt), nickel (Ni), manganese (Mn), indium (In), scandium (Sc), yttrium(Y), gallium (Ga), hafnium (Hf), zinc (Zn), gadolinium (Gd), holmium(Ho), terbium (Tb), samarium (Sm), dysprosium (Dy), neodymium (Nd), orcombinations thereof and nanoparticles comprising oxides, nitrides,carbides or combinations thereof; one or more conducting oxides,conducting nitrides, conducting bromides, conducting carbides, orcombinations thereof; one or more semiconductors; or combinationsthereof.

Also disclosed are devices having an air bearing surface (ABS) andincluding a write pole; a near field transducer (NFT) including a pegand a disc, wherein the peg includes a rear peg portion and a peg tip,the rear peg portion and the peg tip are different materials and the pegtip includes: one or more metals selected from: gold (Au), silver (Ag),aluminum (Al), copper (Cu), rhodium (Rh), ruthenium (Ru), iridium (Ir),niobium (Nb), tantalum (Ta), titanium (Ti), chromium (Cr), zirconium(Zr), palladium (Pd), vanadium (V), molybdenum (Mo), cobalt (Co),magnesium (Mg), iron (Fe), platinum (Pt), nickel (Ni), manganese (Mn),indium (In), scandium (Sc), yttrium (Y), gallium (Ga), hafnium (Hf),zinc (Zn), gadolinium (Gd), holmium (Ho), terbium (Tb), samarium (Sm),dysprosium (Dy), neodymium (Nd), or combinations thereof; iron oxides,ruthenium oxide (RuO), zinc oxide (ZnO), nickel oxide (NiO), chromiumoxide (Cr₂O₃), indium oxide (In₂O₃), or combinations thereof, aluminumzinc oxide (Al:ZnO), gallium zinc oxide (Ga:ZnO), sodium zinc oxide(Na:ZnO), indium tin oxide (ITO), lithium nickel oxide (Li:NiO),magnesium chromium oxide (Mg:Cr₂O₃), nitrogen chromium oxide (N:Cr₂O₃),magnesium and nitrogen co-doped Cr₂O₃, copper chromium oxide (CuCrO₂),magnesium copper chromium oxide (Mg:CuCrO₂), magnesium zinc oxide(Mg_(1-x)Zn_(x)O), indium magnesium zinc oxide (In:Mg_(1-x)Zn_(x)o),aluminum magnesium zinc oxide (Al:Mg_(1-x)Zn_(x)O), magnesium aluminumoxide (Mg₁₂Al₁₄O₃₃), tantalum oxide (TaO), niobium oxide (NbO), titaniumoxide (TiO), yttrium oxide (YO), copper oxide (CuO), tin oxide (SnO); orcombinations thereof.

Also disclosed are devices having an air bearing surface (ABS), thedevice including a write pole; a near field transducer (NFT) thatincludes a peg and a disc, wherein the peg includes a rear peg portionand a peg tip, the rear peg portion and the peg tip are differentmaterials and the peg tip includes: one or more metals selected from:rhodium (Rh), iridium (Ir), platinum (Pt), palladium (Pd), radium (Ra),rhenium (Re), silicon (Si), ruthenium (Ru), nickel (Ni), chromium (Cr),or combinations thereof; iron oxide, indium oxide (InO), ruthenium oxide(RuO), chromium oxide (CrO), tantalum oxide (TaO), niobium oxide (NbO),titanium oxide (TiO), yttrium oxide (YO), copper oxide (CuO), indium tinoxide (ITO), tin oxide (SnO), or combinations thereof; or combinationsthereof.

The above summary of the present disclosure is not intended to describeeach disclosed embodiment or every implementation of the presentdisclosure. The description that follows more particularly exemplifiesillustrative embodiments. In several places throughout the application,guidance is provided through lists of examples, which examples can beused in various combinations. In each instance, the recited list servesonly as a representative group and should not be interpreted as anexclusive list.

BRIEF DESCRIPTION OF THE DRAWINGS

FIG. 1 is a perspective view of a magnetic disc drive that can includeHAMR devices.

FIG. 2 is a cross sectional view of a HAMR magnetic recording head andof an associated recording medium.

FIG. 3 is a cross section of a portion of disclosed devices with a peghaving a peg tip.

FIGS. 4A to 4G provide seven illustrative locations for the diffusionsource.

FIGS. 5A to 5C show three illustrative embodiments of a dual materialpeg.

The figures are not necessarily to scale. Like numbers used in thefigures refer to like components. However, it will be understood thatthe use of a number to refer to a component in a given figure is notintended to limit the component in another figure labeled with the samenumber.

DETAILED DESCRIPTION

Heat assisted magnetic recording (referred to through as HAMR) utilizesradiation, for example from a laser, to heat media to a temperatureabove its curie temperature, enabling magnetic recording. In order todeliver the radiation, e.g., a laser beam, to a small area (on the orderof 20 to 50 nm for example) of the medium, a NFT is utilized. During amagnetic recording operation, the NFT absorbs energy from a laser andfocuses it to a very small area; this can cause the temperature of theNFT to increase. The temperature of the NFT can be elevated up to about400° C. or more.

In some embodiments, a NFT can include a small peg and a large disk. Thevery high temperatures that the NFT reaches during operation can lead todiffusion of the material of the NFT (for example gold) from the peg andtowards the disk. This can lead to deformation and recession of the peg,which can lead to failure of the NFT and the entire head.

Adhesion between the peg and the head overcoat may play an importantrole in deformation and recession of the peg. In previously utilizeddevices, the ends surface of the peg is in direct contact with the headovercoat, for example an oxide in the head overcoat. Typically materialsof the peg, e.g., gold, will not adhere well to an oxide. This maycreate defects at the interface of the gold/oxide interface. Thesedefects then promote diffusion of the gold atoms at the high operatingtemperatures. Devices disclosed herein include a metallic layer betweenthe peg and the head overcoat to promote adhesion between the peg andthe head overcoat and increase overall head reliability.

Disclosed devices include one or more layers adjacent one or moresurfaces of the peg of the NFT to increase or improve adhesion of thepeg material to the surrounding materials or structures within thedevice. If the peg is better adhered to the surrounding materials orstructures, it will be less likely to deform and/or recess.

FIG. 1 is a perspective view of disc drive 10 including an actuationsystem for positioning slider 12 over track 14 of magnetic medium 16.The system depicted in FIGS. 1 and 2 can include disclosed structuresand multilayer gas barrier layers. The particular configuration of discdrive 10 is shown for ease of description and is not intended to limitthe scope of the present disclosure in any way. Disc drive 10 includesvoice coil motor 18 arranged to rotate actuator arm 20 on a spindlearound axis 22. Load beam 24 is connected to actuator arm 20 at headmounting block 26. Suspension 28 is connected to an end of load beam 24and slider 12 is attached to suspension 28. Magnetic medium 16 rotatesaround an axis 30, so that the windage is encountered by slider 12 tokeep it aloft a small distance above the surface of magnetic medium 16.Each track 14 of magnetic medium 16 is formatted with an array of datastorage cells for storing data. Slider 12 carries a magnetic device ortransducer (not shown in FIG. 1) for reading and/or writing data ontracks 14 of magnetic medium 16. The magnetic transducer utilizesadditional electromagnetic energy to heat the surface of medium 16 tofacilitate recording by a process termed heat assisted magneticrecording (HAMR).

A HAMR transducer includes a magnetic writer for generating a magneticfield to write to a magnetic medium (e.g. magnetic medium 16) and anoptical device to heat a portion of the magnetic medium proximate to thewrite field. FIG. 2 is a cross sectional view of a portion of a magneticdevice, for example a HAMR magnetic device 40 and a portion ofassociated magnetic storage medium 42. HAMR magnetic device 40 includeswrite pole 44 and return pole 46 coupled by pedestal 48. Coil 50comprising conductors 52 and 54 encircles the pedestal and is supportedby an insulator 56. As shown, magnetic storage medium 42 is aperpendicular magnetic medium comprising magnetically hard storage layer62 and soft magnetic underlayer 64 but can be other forms of media, suchas patterned media. A current in the coil induces a magnetic field inthe pedestal and the poles. Magnetic flux 58 exits the recording head atair bearing surface (ABS) 60 and is used to change the magnetization ofportions of magnetically hard layer 62 of storage medium 42 enclosedwithin region 58. Near field transducer (NFT) 66 is positioned adjacentthe write pole 44 proximate air bearing surface 60. Positioned over theNFT 66 and optionally over other features in the HAMR magnetic device 40is an overcoat layer 75. Near field transducer 66 is coupled towaveguide 68 that receives an electromagnetic wave from an energy sourcesuch as a laser. An electric field at the end of near field transducer66 is used to heat a portion 69 of magnetically hard layer 62 to lowerthe coercivity so that the magnetic field from the write pole can affectthe magnetization of the storage medium. As can be seen in FIG. 2, aportion of the near field transducer is positioned at the ABS 60 of thedevice.

Devices disclosed herein can also include other structures. Devicesdisclosed herein can be incorporated into larger devices. For example,sliders can include devices as disclosed herein. Exemplary sliders caninclude a slider body that has a leading edge, a trailing edge, and anair bearing surface. The write pole, read pole, optical near fieldtransducer and contact pad (and optional heat sink) can then be locatedon (or in) the slider body. Such exemplary sliders can be attached to asuspension which can be incorporated into a disc drive for example. Itshould also be noted that disclosed devices can be utilized in systemsother than disc drives such as that depicted in FIGS. 1 and 2.

FIG. 3 depicts an illustrative embodiment of at least a portion ofdisclosed devices. The device 301 can include a peg 310 of a near fieldtransducer (NFT) and a write pole 320 separated by an oxide material.The peg 310 in disclosed embodiments includes a rear peg portion 312 anda tip peg portion or peg tip 311. The peg tip 311 is located at orcloser to the air bearing surface (ABS) than is the rear peg portion312. In some embodiments, the peg tip 311 and the rear peg portion 312are not made of the same material. In some optional embodiments, anadhesion layer can exist between the peg tip 311 and the rear pegportion 312.

Devices that include disclosed peg tips may be advantageous because theymay be more reliable because they have a more mechanically robust (incomparison to the material of the remainder of the peg) material at thepeg tip to render the entire structure more stable against recession. Itis thought, but not relied upon, that filling the front of the peg(e.g., the peg tip) with a more mechanically robust material may preventor minimize recession of the peg and thereby extend the lifetime of thepeg. In some embodiments, the peg tip will not interfere or will onlyminimally interfere with the optical properties or functioning of thepeg.

In some embodiments the peg tip may be advantageous because it functionsas an insulator. In this way the peg tip may function to further reducethe temperature of the peg during operation. In some embodiments, theinsulating material may be one with a low thermal conductivity, highoxidation resistance, or combinations thereof. In some embodiments, theinsulating material can be an oxide because they typically haverelatively high oxidation resistance and low thermal conductivity.

It is thought, but not relied upon, that a peg that includes anon-plasmonic peg tip can still function as a NFT as long as thematerial making up the peg tip is polarizable. Polarizability of amaterial is made up of a real part and an imaginary part. The real partdescribes the direction and magnitude of the field. Positive numbersindicate that the charge is accelerated by the driving field of the peg,which is desirable. Negative numbers indicate that the charge oscillatedout of phase with the driving force, which is not desirable. Theimaginary part describes energy stored in an oscillation, or statedanother way in the described case, the peg tip can support a plasmonicresonance independent of the peg/disc.

In some embodiments, materials for the peg tip may also have arelatively large diffusivity in the NFT material (e.g., gold forexample). In some embodiments, materials for the peg tip may also berelatively difficult to oxidize by the surrounding material (e.g.,alumina (AlO_(x)) for example). This property can be characterized bylooking for a material that has a ΔG_(oxide) that is more positive thanthe metal of the surrounding material (e.g., aluminum). In someembodiments, materials for the peg tip may also have relatively highadhesion energy with the surrounding plasmonic material (e.g., gold forexample). In some embodiments, materials for the peg tip may also berelatively mechanically robust.

The peg tip 311 can generally include a polarizable material.Illustrative materials that can be utilized for the peg tip 311 caninclude, for example metals, including alloys of one or more metals;metals with nanoparticles therein including oxides, nitrides, carbidesor combinations thereof; conductive oxides, nitrides, bromides, carbidesor combinations thereof; semiconductors; or combinations thereof.

In some embodiments, the peg tip can include polarizable metals. In someembodiments, the peg tip can include a metal including, for example gold(Au), silver (Ag), aluminum (Al), copper (Cu), rhodium (Rh), ruthenium(Ru), iridium (Ir), niobium (Nb), tantalum (Ta), titanium (Ti), chromium(Cr), zirconium (Zr), palladium (Pd), vanadium (V), molybdenum (Mo),cobalt (Co), magnesium (Mg), iron (Fe), platinum (Pt), nickel (Ni),manganese (Mn), indium (In), scandium (Sc), yttrium (Y), gallium (Ga),hafnium (Hf), zinc (Zn), gadolinium (Gd), holmium (Ho), terbium (Tb),samarium (Sm), dysprosium (Dy), neodymium (Nd), or combinations thereof.In some embodiments, the peg tip can include an alloy including one ormore than one of the above elements. In some embodiments, the peg tipcan include materials listed as possible NFT materials in U.S. Pat. Nos.8,427,925, the disclosure of which is incorporated herein by referencethereto, for example. In some embodiments, the peg tip can includeiridium (Ir), platinum (Pt), palladium (Pd), radium (Ra), rhenium (Re),silicon (Si), ruthenium (Ru), rhodium (Rh), nickel (Ni), chromium (Cr),or combinations thereof. In some embodiments, the peg tip can includeiridium (Ir), platinum (Pt), palladium (Pd), nickel (Ni), rhodium (Rh),ruthenium (Ru), or combinations thereof. In some embodiments, the pegtip can include rhodium (Rh), iridium (Ir), platinum (Pt), orcombinations thereof.

In some embodiments, the peg tip 311 can include metals or metal alloys,such as those discussed above with nanoparticles. In some embodiments,the nanoparticles can include oxides, nitrides, carbides or combinationsthereof. Illustrative oxide nanoparticles can include, for example,oxides of yttrium (Y), lanthanum (La), barium (Ba), strontium (Sr),erbium (Er), zirconium (Zr), hafnium (Hf), germanium (Ge), silicon (Si),calcium (Ca), aluminum (Al), magnesium (Mg), titanium (Ti), cerium (Ce),tantalum (Ta), tungsten (W), thorium (Th), or combinations thereof.Illustrative nitride nanoparticles can include, for example, nitrides ofzirconium (Zr), titanium (Ti), tantalum (Ta), aluminum (Al), boron (B),niobium (Nb), silicon (Si), indium (In), iron (Fe), copper (Cu),tungsten (W), or combinations thereof. Illustrative carbidenanoparticles can include, for example carbides of silicon (Si),aluminum (Al), boron (B), zirconium (Zr), tungsten (W), titanium (Ti),niobium (Nb), or combinations thereof. In some embodiments nanoparticlescan include combinations of oxides, nitrides, for carbides.

In some embodiments the peg tip 311 can include oxides, includingconducting oxides for example. Illustrative conducting oxides caninclude for example, iron oxide (FeO, Fe₂O₃, Fe₃O₄, FeO_(x), orcombinations thereof), ruthenium oxide (RuO), zinc oxide (ZnO), nickeloxide (NiO), chromium oxide (Cr₂O₃), indium oxide (In₂O₃), orcombinations thereof. Illustrative conducting oxides can also includeoxides that include more than one metal. Illustrative bi-metal oxidescan include, for example, aluminum zinc oxide (Al:ZnO), gallium zincoxide (Ga:ZnO), sodium zinc oxide (Na:ZnO), indium tin oxide (ITO),lithium nickel oxide (Li:NiO), magnesium chromium oxide (Mg:Cr₂O₃),nitrogen chromium oxide (N:Cr₂O₃), magnesium and nitrogen co-dopedCr₂O₃, copper chromium oxide (CuCrO₂), magnesium copper chromium oxide(Mg:CuCrO₂), magnesium zinc oxide (Mg_(1-x)Zn_(x)O), indium magnesiumzinc oxide (In:Mg_(1-x)Zn_(x)O), aluminum magnesium zinc oxide(Al:Mg_(1-x)Zn_(x)O), magnesium aluminum oxide (Mg₁₂Al₁₄O₃₃), orcombinations thereof. In some embodiments, the oxide can be a thermallyconductive oxide (TCO) material such as zinc oxide (ZnO), indium oxide(In₂O₃), indium tin oxide (ITO), zinc aluminum oxide (ZnAlO), orcombinations thereof. In some embodiments, the peg tip portion caninclude tantalum oxide (TaO), niobium oxide (NbO), titanium oxide (TiO),yttrium oxide (YO), copper oxide (CuO), indium tin oxide (ITO), tinoxide (SnO), or combinations thereof. In some embodiments, the peg tipportion can include tantalum oxide (TaO), niobium oxide (NbO), titaniumoxide (TiO), or combinations thereof.

In some embodiments, the peg tip 311 can include an oxide(s) with anelement that increases the light absorption of the oxide material.Typically, oxides are transparent materials, which have relatively lowlight absorption. Near field or light can have a difficult timepropagating through the oxide materials with a low n and low k. Additionof materials with high oxidation resistance may serve to increase theabsorption coefficient of the material of the peg tip portion.Illustrative materials that can be added to oxides of the peg tipportion can include, for example platinum (Pt), gold (Au), palladium(Pd), iridium (Ir), rhodium (Rh), carbon (C), rhenium (Re), ruthenium(Ru), or combinations thereof. The additive atoms may exist in thematerial as nanoparticles or exist at the grain boundary to increase theabsorption of the insulating layer. This could also be accomplished bydepositing or forming a multilayer structure of the oxide and theadditive material. In such embodiments, the additive layer material, orthe metallic layer may advantageously have relatively high oxidationresistance, a relatively high melting point, or a combination thereof.

In some embodiments, the peg tip 311 can include nitrides, bromides, orcarbides, including conducting nitrides, bromides, or carbides.Illustrative conducting nitrides can include, for example zirconiumnitride (ZrN), aluminum nitride (AlN), tantalum nitride (TaN), hafniumnitride (HfN), titanium nitride (TiN), boron nitride (BN), niobiumnitride (NbN), or combinations thereof. Illustrative conducting carbidescan include, for example silicon carbide (SiC), aluminum carbide (AlC),boron carbide (BC), zirconium carbide (ZrC), tungsten carbide (WC),titanium carbide (TiC) niobium carbide (NbC), or combinations thereof.Illustrative conducting bromides can include, for example aluminumbromide (AlBr), chromium bromide (CrBr), titanium bromide (TiBr),scandium bromide (ScBr), silver bromide (AgBr), or combinations thereof.Additionally doped oxides can also be utilized. Illustrative dopedoxides can include aluminum oxide (AlO), silicon oxide (SiO), titaniumoxide (TiO), tantalum oxide (TaO), yttrium oxide (YO), niobium oxide(NbO), cerium oxide (CeO), copper oxide (CuO), tin oxide (SnO), orcombinations thereof. The oxides can have impurity doping, for exampleoxygen vacancies, metal dopants, or combinations thereof.

In some embodiments the peg tip 311 can include semiconductors.Illustrative semiconductors can include for example, silicon (Si),germanium (Ge), gallium nitride (GaN), gallium arsenide (GaAs), indiumarsenide (InAs), zinc selenium (ZeSe), zinc tellurium (ZnTe), copperchloride (CuCl), copper sulfide (Cu₂S), or combinations thereof.

In some embodiments the length of the peg tip in an axis perpendicularto the ABS can be characterized with respect to the length of the entirepeg in an axis perpendicular to the ABS. In some embodiments the peg tipcan have a length that is not greater than 95% of the length of theentire peg, not greater than 80% of the length of the entire peg, or notgreater than 50% of the length of the entire peg. In some embodimentsthe peg tip can have a length is not less than 0.1% of the length of theentire peg, not less than 0.5% of the length of the entire peg, not lessthan 1% of the length of the entire peg, or not less than 10% of thelength of the entire peg. In some embodiments the length of the peg tipcan be no greater than 50 nm, not greater than 20 nm, not greater than15 nm, or not greater than 10 nm. In some embodiments the length of thepeg tip can be not less than 0.5 nm, not less than 1 nm, or not lessthan 2 nm.

The rear peg portion 312 can generally be made of plasmonic materials.In some embodiments, the rear peg portion 312 can be made of the same ora similar material as an associated disc (not shown in FIG. 3). In someembodiments, the rear peg portion, the disc, a heat sink or anycombination thereof can be made of a plasmonic material. IllustrativeNFT materials can include plasmonic materials such as gold (Au), silver(Ag), aluminum (Al), copper (Cu), ruthenium (Ru), rhodium (Rh), iridium(Ir), platinum (Pt), or alloys thereof; titanium nitride (TiN),zirconium nitride (ZrN), aluminum nitride (AlN), tantalum nitride (TaN),indium tin oxide (ITO), aluminum zinc oxide (Al:ZnO), gallium zinc oxide(Ga:ZnO) or combinations thereof; thermally conductive oxides; indiumtin oxide (ITO); and combinations thereof. In some embodiments,illustrative NFT materials can also include those disclosed in U.S.Patent Publication No. 2013/0286799; and U.S. Pat. Nos. 8,830,800,8,427,925 and 8,934,198; the disclosures of which are incorporatedherein by reference thereto. In some embodiments the peg can includegold.

Many different processes and methods can be utilized to fabricatedisclosed devices.

In some embodiments, a peg tip portion can be fabricated by etching analready formed peg, filling the etched tip in with a desired material,and lapping the structure. More specifically, a bar can be coarselapped, then part of the peg can be removed by plasma etching orchemical etching. Next, the desired material can be deposited in theetched portion to fill the cavities at the tip of the peg(s). Afterthat, a fine lap can be used to remove the layer of material formed onsurfaces other than the peg. Finally, a regular head overcoat (HOC)could be deposited on the ABS surface.

In some embodiments, methods of forming or fabricating disclosed pegsand devices including disclosed pegs can include relevant steps at thewafer level or the slider level. Methods of forming or fabricatingdisclosed pegs and devices including disclosed pegs can be characterizedas including static placement steps or dynamic placement steps. Staticplacement steps can include, for example deposition and photolithographysteps. Static placement steps can be advantageous because they aretypically straightforward processes and offer precise material andgeometrical control. However, static placement steps can also requireABS lapping controls and the possibility that recession of the rear pegportion leaving a void. Dynamic placement steps can include, for examplediffusion and implantation steps. Dynamic placement steps can beadvantageous because they will automatically fill any voids formed fromrecession of the peg. However, dynamic placement steps can be somewhatcomplicated and less controllable than static placement steps.

In some embodiments, a dynamic process can include placing a diffusionsource at the wafer level and then diffusing the material at the sliderlevel or during operation.

FIGS. 4A to 4G provide seven illustrative locations for the diffusionsource (the diffusion sources in each figure are indicated by the arrowin the figures). FIG. 4A specifies various portions of the device (thatare consistent throughout FIGS. 4A to 4G and 5A to 5C). Specifically,the device in FIG. 4A includes the write pole 420, the heat sink 430,the NFT to pole space or NPS 450, the disc 460 of the NFT, the core toNFT space or CNS 470 and the peg 480 of the NFT. The device in FIG. 4Ashows a possible diffusion source that is located around the peg and atleast a portion of the disc. FIG. 4B shows a possible diffusion sourcebeing part of the pole seed or as a peg coupler. FIG. 4C shows apossible diffusion source being a shell of the heat sink (e.g. heat sink430 in FIG. 4A). FIG. 4D shows a possible diffusion source being abottom disc (e.g. disc 460). FIG. 4E shows a possible diffusion sourcebeing located in the middle of 430 and 460. FIG. 4F shows a possiblediffusion source being part of the peg as an alloy, a multilayer, orcombination thereof. FIG. 4G shows a possible diffusion source being atleast part of the outer skin (shell) of the disc (e.g., the disc 460).

In some embodiments, the diffusion source can be deposited as part ofthe NFT, a peg coupler, or the magnetic pole (with FIGS. 4A to 4Goffering illustrative locations for the diffusion source). Then usualwafer level processing steps can occur. At the slider level, the devicecan then be annealed (for example at 225° C.). The annealing could takeplace after a final lapping step, before the head overcoat is depositedor with a thin head overcoat layer that has sufficient gas permeability,with or without desired processing gases (e.g., O₂, N₂, etc.), or anycombination thereof. The material from the diffusion source thendiffuses to the ABS and accumulates at the peg tip.

In some embodiments, the diffusion source can be deposited as part ofthe NFT, a peg coupler, or the magnetic pole (with FIGS. 4A to 4Goffering illustrative locations for the diffusion source). Then usualwafer level and slider level processing steps can then be undertaken.The source material can then diffuse to the ABS and accumulate at thepeg tip, forming a peg tip portion as discussed above, during operationof the HAMR device.

In some embodiments, static methods can be utilized. For example a dualmaterial peg can be formed during wafer level fabrication. FIGS. 5A to5C show three illustrative embodiments of such a peg. The device in FIG.5A includes a polarizable material located at the peg tip (indicated bythe arrow). FIG. 5B shows a polarizable material (indicate by the arrow)at the back of the peg (opposite the ABS). Such an embodiment couldinclude rhodium (Rh) for example, as a polarizable material, at the backof the peg. This could function as a blocker of void source in the disc.FIG. 5C shows a material at about the middle of the peg (shown by thearrow). Such embodiments as these form a peg with two differentmaterials through deposition and photo-patterning, for example. Regularwafer processing and slider processing steps can then be included.

In some embodiments, a peg tip portion can be formed with two differentmaterials through deposition and patterning steps (e.g.,photolithography patterning). At the slider level, the device can beannealed (for example at 225° C.) after a final lapping step, beforehead overcoat deposition or with a thin head overcoat layer havingsufficient gas permeability, with or without desired processing gases(e.g., O₂, N₂, etc.), or any combination thereof. Such processes canform desired oxides, nitrides, or combinations thereof to form a peg tipportion,

In some embodiments, a peg tip portion can be formed by selectivelyremoving a portion of the peg at the tip, depositing materials at thefront of the peg and then converting the deposited materials intodesired materials. In some embodiments, materials can be converted intodesired peg tip materials by annealing the deposited material (forexample at 225° C.) with a desired processing gas (e.g., O₂, N₂, etc.),by operating the laser within the device (with or without processinggases), by laser heating from the ABS, or combinations thereof.Undesired materials at the ABS other than the peg tip portion can thenbe removed using lapping (for example). Finally, a head overcoat layercan be deposited over the structure.

In some embodiments, a peg tip portion can be formed by selectivelyremoving a portion of the peg at the tip, depositing materials at thefront of the peg and then driving diffusion of the materials into thepeg tip through annealing (with or without processing gases), byoperating the laser within the device (with or without processinggases), by laser heating from the ABS, or a combination thereof.Undesired materials at the ABS other than the peg tip portion can thenbe removed using lapping (for example) if necessary. Finally, a headovercoat layer can be deposited over the structure.

In some embodiments, a peg tip portion can be formed by selectivelyremoving a portion of the peg at the tip, depositing materials at thefront of the peg and then driving diffusion of the materials into thepeg tip through annealing (with or without processing gases), byoperating the laser within the device (with or without processinggases), by laser heating from the ABS, or a combination thereof. Thediffused materials can then be converted into desired peg tip materialsby annealing the deposited material (for example at 225° C.) with adesired processing gas (e.g., O₂, N₂, etc.), by operating the laserwithin the device (with or without processing gases), by laser heatingfrom the ABS, or combinations thereof. Undesired materials at the ABSother than the peg tip portion can then be removed using lapping (forexample) if necessary. Finally, a head overcoat layer can be depositedover the structure.

In some embodiments, a peg tip portion can be formed by selectivelyremoving a portion of the peg at the tip, for example using plasmaetching, chemical etching, or some combination thereof. A desiredmaterial (for example, a metal) can then be deposited over the ABSsurface with an ion flux perpendicular to the ABS surface so that themetallic (for example) layer is deposited on the recessed peg and theother features on the ABS surface. After that, an ion flux with an anglesmaller than 90° can be used to etch the metallic layer so that themetallic layer on the peg surface can be removed with a smaller etchrate due to the shadowing effect. Use of such a method can remove thematerial (e.g., a metallic material) in areas other than the recessedpeg region and the material at the peg tip portion can remain. Removalof material (in some embodiments a metal material) overlying the core,CNS, NPS, other cladding areas, or combinations thereof may beadvantageous because a metal at that area(s) on the surface could absorblight and become very hot (e.g., greater than about 700° C.). Suchelevated temperatures could cause damage to the core, CNS, NPS, othercladding areas, or combinations thereof.

In some optional embodiments, devices disclosed herein can include pegsthat are recessed relative to the core, CNS, NPS, pole, or anycombination thereof at the ABS. Such devices may be advantageous becausethey can prevent or minimize direct contact of the peg with asperitieson the media. Such devices may also be advantageous because they canprevent or minimize sudden temperature rises that can occur from directpeg tip—media asperity contact. A recessed peg can also be described aspegs such as that disclosed herein that include a peg tip portion and inthis case, the peg tip portion contains the material of the headovercoat layer.

The depth of the peg recession relative to the core, CNS, NPS, pole orany combination thereof, if too shallow won't effectively function toprotect the peg. If the depth of the peg recession is too deep, the nearfield heating efficiency can be detrimentally reduced. During writing,laser heating together with writer coil heating may generate localizedprotrusion surrounding the peg in the head and the media surface. Insome embodiments, the depth of the peg recession relative to the core,CNS, NPS, pole, or any combination thereof can be not greater than 50nm, not greater than 15 nm, or even not greater than 10 nm. In someembodiments, the depth of the peg recession relative to the core, CNS,NPS, pole, or any combination thereof can be not less than 1 nm or evennot less than 0.1 nm for example.

A recessed peg can be fabricated by etching the peg tip and thendepositing a head overcoat. After a final lap of the bar, atoms on thepeg tip can be removed by plasma etching or chemical etching to producea recessed peg. After that, a regular head overcoat can be depositedover the ABS surface to produce a head with recessed peg.

Disclosed devices could also optionally be combined with discloseddevices or portions of devices disclosed in commonly owned U.S. patentapplication Ser. No. 15/073,433, filed on the same day herewith entitledDEVICES INCLUDING METAL LAYER, having attorney docket number 430.18400010, claiming priority to U.S. Provisional Patent ApplicationNumber 62/136,546; the disclosure of which is incorporated herein byreference thereto.

All scientific and technical terms used herein have meanings commonlyused in the art unless otherwise specified. The definitions providedherein are to facilitate understanding of certain terms used frequentlyherein and are not meant to limit the scope of the present disclosure.

As used in this specification and the appended claims, “top” and“bottom” (or other terms like “upper” and “lower”) are utilized strictlyfor relative descriptions and do not imply any overall orientation ofthe article in which the described element is located.

As used in this specification and the appended claims, the singularforms “a”, “an”, and “the” encompass embodiments having pluralreferents, unless the content clearly dictates otherwise.

As used in this specification and the appended claims, the term “or” isgenerally employed in its sense including “and/or” unless the contentclearly dictates otherwise. The term “and/or” means one or all of thelisted elements or a combination of any two or more of the listedelements.

As used herein, “have”, “having”, “include”, “including”, “comprise”,“comprising” or the like are used in their open ended sense, andgenerally mean “including, but not limited to”. It will be understoodthat “consisting essentially of”, “consisting of”, and the like aresubsumed in “comprising” and the like. For example, a conductive tracethat “comprises” silver may be a conductive trace that “consists of”silver or that “consists essentially of” silver.

As used herein, “consisting essentially of,” as it relates to acomposition, apparatus, system, method or the like, means that thecomponents of the composition, apparatus, system, method or the like arelimited to the enumerated components and any other components that donot materially affect the basic and novel characteristic(s) of thecomposition, apparatus, system, method or the like.

The words “preferred” and “preferably” refer to embodiments that mayafford certain benefits, under certain circumstances. However, otherembodiments may also be preferred, under the same or othercircumstances. Furthermore, the recitation of one or more preferredembodiments does not imply that other embodiments are not useful, and isnot intended to exclude other embodiments from the scope of thedisclosure, including the claims.

Also herein, the recitations of numerical ranges by endpoints includeall numbers subsumed within that range (e.g., 1 to 5 includes 1, 1.5, 2,2.75, 3, 3.80, 4, 5, etc. or 10 or less includes 10, 9.4, 7.6, 5, 4.3,2.9, 1.62, 0.3, etc.). Where a range of values is “up to” a particularvalue, that value is included within the range.

Use of “first,” “second,” etc. in the description above and the claimsthat follow is not intended to necessarily indicate that the enumeratednumber of objects are present. For example, a “second” substrate ismerely intended to differentiate from another infusion device (such as a“first” substrate). Use of “first,” “second,” etc. in the descriptionabove and the claims that follow is also not necessarily intended toindicate that one comes earlier in time than the other.

As used herein, “about” or “approximately” shall generally mean within20 percent, within 10 percent, or within 5 percent of a given value orrange. “about” can also in some embodiments imply a range dictated by ameans of measuring the value at issue. Other than in the examples, orwhere otherwise indicated, all numbers are to be understood as beingmodified in all instances by the term “about”.

Thus, embodiments of devices including an overcoat layer are disclosed.The implementations described above and other implementations are withinthe scope of the following claims. One skilled in the art willappreciate that the present disclosure can be practiced with embodimentsother than those disclosed. The disclosed embodiments are presented forpurposes of illustration and not limitation.

What is claimed is:
 1. A device having an air bearing surface (ABS), thedevice comprising: a write pole; a near field transducer (NFT)comprising a peg and a disc, wherein the peg has an entire length andcomprises a rear peg portion and a peg tip, wherein the peg tip is from1% to 80% of the length of the entire peg, wherein the rear peg portionand the peg tip are different materials and the peg tip comprises: oneor more metals selected from: gold (Au), silver (Ag), aluminum (Al),copper (Cu), rhodium (Rh), ruthenium (Ru), iridium (Ir), niobium (Nb),tantalum (Ta), titanium (Ti), chromium (Cr), zirconium (Zr), palladium(Pd), vanadium (V), molybdenum (Mo), cobalt (Co), magnesium (Mg), iron(Fe), platinum (Pt), nickel (Ni), manganese (Mn), indium (In), scandium(Sc), yttrium (Y), gallium (Ga), hafnium (Hf), zinc (Zn), gadolinium(Gd), holmium (Ho), terbium (Tb), samarium (Sm), dysprosium (Dy),neodymium (Nd), or combinations thereof; one or more metals selectedfrom gold (Au), silver (Ag), aluminum (Al), copper (Cu), rhodium (Rh),ruthenium (Ru), iridium (Ir), niobium (Nb), tantalum (Ta), titanium(Ti), chromium (Cr), zirconium (Zr), palladium (Pd), vanadium (V),molybdenum (Mo), cobalt (Co), magnesium (Mg), iron (Fe), platinum (Pt),nickel (Ni), manganese (Mn), indium (In), scandium (Sc), yttrium (Y),gallium (Ga), hafnium (Hf), zinc (Zn), gadolinium (Gd), holmium (Ho),terbium (Tb), samarium (Sm), dysprosium (Dy), neodymium (Nd), orcombinations thereof and nanoparticles comprising oxides, nitrides,carbides or combinations thereof; one or more conducting oxides,conducting nitrides, conducting bromides, conducting carbides, orcombinations thereof; one or more semiconductors; or combinationsthereof.
 2. The device according to claim 1, wherein the peg tip portioncomprises rhodium (Rh), iridium (Ir), platinum (Pt), palladium (Pd),radium (Ra), rhenium (Re), silicon (Si), ruthenium (Ru), nickel (Ni),chromium (Cr), or combinations thereof.
 3. The device according to claim1, wherein the peg tip portion comprises rhodium (Rh), iridium (Ir),platinum (Pt), or combinations thereof.
 4. The device according to claim1, wherein the peg tip portion comprises iridium (Ir), platinum (Pt),palladium (Pd), nickel (Ni), rhodium (Rh), ruthenium (Ru), orcombinations thereof.
 5. The device according to claim 1, wherein thepeg tip portion comprises iron oxide (FeO), indium oxide (InO),ruthenium oxide (RuO), chromium oxide (CrO), tantalum oxide (TaO),niobium oxide (NbO), titanium oxide (TiO), yttrium oxide (YO), copperoxide (CuO), indium tin oxide (ITO), tin oxide (SnO), or combinationsthereof.
 6. The device according to claim 1, wherein the peg tip portioncomprises tantalum oxide (TaO), niobium oxide (NbO), titanium oxide(TiO), or combinations thereof.
 7. The device according to claim 1,wherein the peg tip portion comprises iron oxide (FeO).
 8. The deviceaccording to claim 1, wherein the peg tip portion has a length of notgreater than 50 nm and not less than 0.5 nm.
 9. The device according toclaim 1, wherein the peg tip portion has a length of not greater than 15nm and not less than 2 nm.
 10. The device according to claim 1 furthercomprising an adhesion layer positioned between the peg tip and the rearpeg portion.
 11. The device according to claim 1, wherein the rear pegportion comprises gold (Au), silver (Ag), aluminum (Al), copper (Cu),ruthenium (Ru), rhodium (Rh), iridium (Ir), platinum (Pt), or alloysthereof; titanium nitride (TiN), zirconium nitride (ZrN), aluminumnitride (AlN), tantalum nitride (TaN), indium tin oxide (ITO), aluminumzinc oxide (Al:ZnO), gallium zinc oxide (Ga:ZnO) or combinationsthereof; thermally conductive oxides; or combinations thereof.
 12. Adevice having an air bearing surface (ABS), the device comprising: awrite pole; a near field transducer (NFT) comprising a peg and a disc,wherein the peg comprises a rear peg portion and a peg tip, wherein thepeg has an entire length and comprises a rear peg portion and a peg tip,wherein the peg tip is from 1% to 80% of the length of the entire peg,and wherein the rear peg portion and the peg tip are different materialsand and the peg tip comprises: one or more metals selected from: gold(Au), silver (Ag), aluminum (Al), copper (Cu), rhodium (Rh), ruthenium(Ru), iridium (Ir), niobium (Nb), tantalum (Ta), titanium (Ti), chromium(Cr), zirconium (Zr), palladium (Pd), vanadium (V), molybdenum (Mo),cobalt (Co), magnesium (Mg), iron (Fe), platinum (Pt), nickel (Ni),manganese (Mn), indium (In), scandium (Sc), yttrium (Y), gallium (Ga),hafnium (Hf), zinc (Zn), gadolinium (Gd), holmium (Ho), terbium (Tb),samarium (Sm), dysprosium (Dy), neodymium (Nd), or combinations thereof;iron oxides, ruthenium oxide (RuO), zinc oxide (ZnO), nickel oxide(NiO), chromium oxide (Cr₂O₃), indium oxide (In₂O₃), or combinationsthereof, aluminum zinc oxide (Al:ZnO), gallium zinc oxide (Ga:ZnO),sodium zinc oxide (Na:ZnO), indium tin oxide (ITO), lithium nickel oxide(Li:NiO), magnesium chromium oxide (Mg:Cr₂O₃), nitrogen chromium oxide(N:Cr₂O₃), magnesium and nitrogen co-doped Cr₂O₃, copper chromium oxide(CuCrO₂), magnesium copper chromium oxide (Mg:CuCrO₂), magnesium zincoxide (Mg_(1-x)Zn_(x)O), indium magnesium zinc oxide(In:Mg_(1-x)Zn_(x)o), aluminum magnesium zinc oxide(Al:Mg_(1-x)Zn_(x)O), magnesium aluminum oxide (Mg₁₂Al₁₄O₃₃), tantalumoxide (TaO), niobium oxide (NbO), titanium oxide (TiO), yttrium oxide(YO), copper oxide (CuO), tin oxide (SnO); or combinations thereof. 13.The device according to claim 12, wherein the peg tip portion comprisesrhodium (Rh), iridium (Ir), platinum (Pt), palladium (Pd), radium (Ra),rhenium (Re), silicon (Si), ruthenium (Ru), nickel (Ni), chromium (Cr),or combinations thereof.
 14. The device according to claim 12, whereinthe peg tip portion comprises iron oxide (FeO), indium oxide (InO),ruthenium oxide (RuO), chromium oxide (CrO), tantalum oxide (TaO),niobium oxide (NbO), titanium oxide (TiO), yttrium oxide (YO), copperoxide (CuO), indium tin oxide (ITO), tin oxide (SnO), or combinationsthereof.
 15. The device according to claim 12, wherein the peg tipportion has a length of not greater than 50 nm and not less than 0.5 nm.16. The device according to claim 12, wherein the peg tip portion has alength of not greater than 15 nm and not less than 2 nm.
 17. The deviceaccording to claim 12 further comprising an adhesion layer positionedbetween the peg tip and the rear peg portion.
 18. The device accordingto claim 12, wherein the rear peg portion comprises gold (Au), silver(Ag), aluminum (Al), copper (Cu), ruthenium (Ru), rhodium (Rh), iridium(Ir), platinum (Pt), or alloys thereof titanium nitride (TiN), zirconiumnitride (ZrN), aluminum nitride (AlN), tantalum nitride (TaN), indiumtin oxide (ITO), aluminum zinc oxide (Al:ZnO), gallium zinc oxide(Ga:ZnO) or combinations thereof; thermally conductive oxides; orcombinations thereof.
 19. A device having an air bearing surface (ABS),the device comprising: a write pole; a near field transducer (NFT)comprising a peg and a disc, wherein the peg comprises a rear pegportion and a peg tip, wherein the peg has an entire length andcomprises a rear peg portion and a peg tip, wherein the peg tip is from1% to 80% of the length of the entire peg, and wherein the rear pegportion and the peg tip are different materials and the peg tipcomprises: one or more metals selected from: rhodium (Rh), iridium (Ir),platinum (Pt), palladium (Pd), radium (Ra), rhenium (Re), silicon (Si),ruthenium (Ru), nickel (Ni), chromium (Cr), or combinations thereof;iron oxide, indium oxide (InO), ruthenium oxide (RuO), chromium oxide(CrO), tantalum oxide (TaO), niobium oxide (NbO), titanium oxide (TiO),yttrium oxide (YO), copper oxide (CuO), indium tin oxide (ITO), tinoxide (SnO), or combinations thereof; or combinations thereof.
 20. Thedevice according to claim 19, wherein the peg tip portion has a lengthof not greater than 15 nm and not less than 2 nm.